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LMG2610

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650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense

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Data sheet

LMG2610

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 5.4 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection, USB C/PD compatible Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 5.4 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Overtemperature protection, USB C/PD compatible Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RRG) 40 63 mm² 9 x 7
  • 650-V GaN power-FET half bridge
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8 us
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • BST idle quiescent current: 60 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 9x7 mm QFN package with dual thermal pads
  • 650-V GaN power-FET half bridge
  • 170-mΩ low-side and 248-mΩ high-side GaN FETs
  • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side / high-side gate-drive interlock
  • High-side gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up : < 8 us
  • Low-side / high-side cycle-by-cycle over-current protection
  • Over-temperature protection with FLT pin reporting
  • AUX idle quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • BST idle quiescent current: 60 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 9x7 mm QFN package with dual thermal pads

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side gate-drive signal level shifter eliminates noise and burst-mode power dissipation problems found with external solutions. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2610 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.
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Technical documentation

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* Data sheet LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters datasheet (Rev. A) PDF | HTML 16 Nov 2022
Application note Enabling Small-Form-Factor AC/DC Adapters With use of Integrated GaN Technology PDF | HTML 27 Mar 2023
EVM User's guide Using the UCC28782EVM-030 (Rev. C) PDF | HTML 28 Jul 2022

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC28782EVM-030 — UCC28782 active clamp flyback converter 65-W USB-C PD EVM with LMG2610 integrated GaN half-bridge

UCC28782EVM-030 demonstrates high-efficiency and high-density for a 65-W USB Type-C™ power delivery (PD) off-line adapter using the UCC28782 active-clamp flyback controller.  The input supports a universal 90 Vac to 264 Vac and the single output can be set to 5 V, 9 V and 15 V all at 3-A (...)

User guide: PDF | HTML
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Simulation model

LMG2610 SIMPLIS Model

SNOM766.ZIP (304 KB) - SIMPLIS Model
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Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG5200 — 80V GaN Half Bridge Power Stage
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Calculation tool

SNOR036 — LMG2610 Active-Clamp Flyback Power Stage Design Calculator

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

PMP23146 — 45-W high-power-density active clamp flyback with GaN reference design for server auxiliary power

This reference design is a GaN-based 45-W active-clamp flyback (ACF) targeting maximum power density. This supply is designed to provide auxiliary power in server and telecom power supply units (PSUs). The UCC28782 ACF controller and LMG2610 GaN half-bridge are used to drive a planar transformer (...)
Test report: PDF
Reference designs

PMP22244 — 60-W USB Type-C® high-density active clamp flyback with GaN reference design

This reference design is a high-density, 60-W 115-VAC input power supply for USB Type-C applications that uses the UCC28782 active clamp flyback controller, LMG2610 integrated GaN half-bridge and UCC24612 synchronous rectifier driver. The maximum power rating is 60 W at 20-V or 15-V output, 54 W at (...)
Test report: PDF
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VQFN (RRG) 40 View options
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